www.DataSheet4U.com
P
. . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N ...
www.DataSheet4U.com
P
. . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som
IM REL
RY A N I
MITSUBISHI SEMICONDUCTOR <
TRANSISTOR ARRAY>
M63816P/FP/KP
8-UNIT 300mA
TRANSISTOR ARRAY WITH CLAMP DIODE
PIN CONFIGURATION
IN1→ IN2→ IN3→ INPUT
1 2 3 18 →O1 17 →O2 16 →O3 15 →O4 14 →O5 13 →O6 12 →O7 11 →O8 10
DESCRIPTION M63816P/FP/KP are eight-circuit Single
transistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
IN4→ 4 IN5→
5
OUTPUT
IN6→ 6
FEATURES Three package configurations (P, FP, and KP) q Medium breakdown voltage (BVCEO ≥ 35V) q Synchronizing current (IC(max) = 300mA) q With clamping diodes q Low output saturation voltage q Wide operating temperature range (Ta = –40 to +85 °C)
q
IN7→ IN8→ GND
7 8 9
→COM COMMOM
Package type 18P4G(P)
NC
1
20
NC
IN1→ 2 IN2→ 3
19 →O1 18 →O2 17 →O3 16 →O4 15 →O5 14 →O6 13 →O7 12 →O8 11 →COM
APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals
IN3→ 4 IN4→ 5 INPUT IN5→ 6 IN6→ 7 IN7→ 8 IN8→ 9
OUTPUT
FUNCTION The M63816P/FP/KP each have eight circuits consisting of
NPN transistor. A spike-killer clamping diode is provided between each output pin (collector) and COM pin. The
transistor emitters are all connected to the GND pin. The
transistors allow synchronous flow of 300mA collector current. A maximu...