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MITSUBISHI SEMICONDUCTOR <
TRANSISTOR ARRAY>
M63812P/FP/GP/KP
7-UNIT 300mA
TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION M63812P, M63812FP, M63812GP and M63812KP are seven-circuit Singe
transistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION
IN1→ IN2→ IN3→ INPUT IN4→ IN5→ IN6→ IN7→
1 2 3 4 5 6 7 8 16 →O1 15 →O2 14 →O3 13 →O4 12 →O5 11 →O6 10 →O7 9
OUTPUT
FEATURES q Four package configurations (P, FP, GP and KP) q Medium breakdown voltage (BVCEO ≥ 35V) q Synchronizing current (IC(max) = 300mA) q With clamping diodes q With zener diodes q Low output saturation voltage q Wide operating temperature range (Ta=–40 to +85 °C)
GND
→COM COMMOM
Package type
16P4(P) 16P2N-A(FP) 16P2S-A(GP) 16P2Z-A(KP)
CIRCUIT DIAGRAM
COM OUTPUT
Vz=7V
APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals
INPUT 10.5k 10k GND The seven circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit: Ω
FUNCTION The M63812P, M63812FP, M63812GP and M63812KP each have seven circuits consisting of
NPN transistor.A spikekiller clamping diode is provided between each output pin (collector) and COM pin (pin9). The
transistor emitters are all connected to the GND pin (pin 8). The
transistors allow synchronous flow of 300mA collector current...
