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MITSUBISHI SEMICONDUCTOR <
TRANSISTOR ARRAY>
M63803P/FP/GP/KP
7-UNIT 300mA
TRANSISTOR ARRAY
DESCRIPTION M63803P, M63803FP, M63803GP and M63803KP are seven-circuit Singe
transistor arrays. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply. PIN CONFIGURATION
IN1→ 1 IN2→ 2 IN3→ 3 INPUT IN4→ 4 IN5→ 5 IN6→ 6 IN7→ 7
16 → O1 15 → O2 14 → O3 13 → O4 12 → O5 11 → O6 10 → O7 9
OUTPUT
FEATURES q Four package configurations (P, FP, GP and KP) q Medium breakdown voltage (BVCEO ≥ 35V) q Synchronizing current (IC(max) = 300mA) q Low output saturation voltage q Wide operating temperature range (Ta = –40 to +85 °C)
GND
8
NC
16P4(P) 16P2N-A(FP) 16P2S-A(GP) Package type 16P2Z-A(KP)
NC : No connection
CIRCUIT DIAGRAM
OUTPUT
APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals
INPUT 10.5k 10k GND
FUNCTION The M63803P, M63803FP, M63803GP and M63803KP each have seven circuits consisting of
NPN transistor. The
transistor emitters are all connected to the GND pin (pin 8) The
transistors allow synchronous flow of 300mA collector current. A maximum of 35V voltage can be applied between the collector and emitter.
The seven circuits share the GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω
ABSOLUTE MAXIMUM RATINGS
Symbol VCEO IC VI Parameter Collector-emitter voltage Collector current I...