M54513FP

www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54513P/FP 8-UNIT 50mA TRANSISTOR ARRAY DESCRIPTION M54513P and M54513FP are eight-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION         INPUT          IN1→ 1 IN2→ 2 IN3→ 3 IN4→ 4 IN5→ 5 IN6→ 6 IN7→ 7 IN8→ 8 GND 9 18 →O1  17 →O2   16 →O3  15 →O4  14 →O5  13 →O6  12 →O7  11 →O8  10 NC NC : No connection     OUTPUT     FEATURES High breakdown voltage (BV CEO ≥ 40V) Synchronizing current (Ic(max) = 50mA) Wide operating temperature range (Ta = –20 to +75°C) Package type 18P4G(P) NC 1 20 NC APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals FUNCTION The M54513P and M54513FP each have eight circuits consisting of NPN transistors. These ICs have resistance of 2 k Ω at inputs and of 13.6kΩ between the base and emitter. The GND is used in common in each circuit. The transistors allow synchronous flow of 50mA collector current. A maximum of 40V voltage can be applied between the collector and emitter. The M54513FP is enclosed in a molded small flat package, enabling space-saving design.         INPUT          IN1→ 2 IN2→ 3 IN3→ 4 IN4→ 5 IN5→ 6 IN6→ 7 IN7→ 8 IN8→ 9 GND 10 19 →O1  18 →O2  17 →O3  16 →O4  15 →O5  14 →O6  13 →O7  12 →O8  11 NC NC : No connectio...