DBG250G

www.DataSheet4U.com Ordering number : ENA0701 DBG250G SANYO Semiconductors DATA SHEET DBG250G Features Diffused Junction Silicon Diode 25A Single-Phase Bridge Rectifier Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=600V. Average output current : IO=25A. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Dilective Strength Voltage Tightening Torque Symbol VRM IO IFSM Tj Tstg Vdis TOR Terminals tc case, AC 1 minute ( ): recommended value Tc=113°C, with heatsink Ta=25°C, without heatsink 50Hz sine 1cycle peak value Conditions Ratings 600 25 3.6 300 150 --55 to +150 2.5 0.8(0.5) Unit V A A A °C °C kV Nm Electrical Characteristics at Ta=25°C Per Constituent element of bridge. Parameter Forward Voltage Reverse Current Thremal Resistance(Junction-Ambient) Thremal Resistance(Junction-Case) Thremal Resistance(Junction-Lead) Marking: BG250G Symbol VF IR Rth(j-a) Rth(j-c) Rth(j-l) IF=12.5A VR=600V Without heatsink With heatsink Without heatsink Conditions Ratings min typ max 0.92 10 25 0.8 5 Unit V µA °C / W °C / W °C / W Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The product...