InGaAIP S-GW Type
Ultra Hight Bright Surface Mounting Chip
InGaAIP S-GW Type
LED
0.5 ± 0.1
1.7
Unit: mm
0.3 ± 0.1
2.9
LNJ416K54RW ····...
Description
Ultra Hight Bright Surface Mounting Chip
InGaAIP S-GW Type
LED
0.5 ± 0.1
1.7
Unit: mm
0.3 ± 0.1
2.9
LNJ416K54RW ········· LNJ416K54RW ········ Amber LNJ806R58RW ········· LNJ806R58RW ········ Orange
2
1.25
Conventional Part No.
Global Prat No.
Lighting Color
1
5°
5°
(0.11)
Lighting Color PD(mW) IF(mA) IFP(mA)∗ VR(V) Topr(°C) Tstg(°C) Amber 50 20 60 4 −25 ∼ +85 −30 ∼ +100 Orange 50 20 60 4 −25 ∼ +85 −30 ∼ +100
IFP. duty 10% Pulse width 1 msec. The condition of IFP is duty 10%, Pulse width 1 msec
2°
2° 1
2
0.2 − 0.1 0 ± 0.05 0.9 +
s Adsolute Maximum Ratings (Ta = 25°C)
0.6
s Electro−Optical Characteristics (Ta = 25°C) Conventional Lighting IO Lens Color Part No. Color Typ Min LNJ406K54RW Amber Yellow Diffused 8.5 3.5 LNJ806R58RW Orange Red Diffused 5.0 2.0 Unit mcd mcd − − VF IF 10 10 mA Typ 2.0 1.9 V Max 2.3 2.3 V λP Typ 595 620 nm ∆λ Typ 15 17 nm IR IF 10 10 mA Max 100 100 µA VR 4 4 V
IO IF
30
RW
IF VF
100
IO Ta
Relative Luminous Intensity
500 300
10
50
6R 58R W LN J40 6K 54R W
Luminous Intensity
5 3
LN
J4
L
8 NJ
06
R
Forward Current
K 06
54
RW 58
30
J80
10 5 3
100 50 30
1 0.5 0.3
LNJ80 6R58R W LNJ4 06K5 4RW
0.1 1
3
5
10
30
50 100
300
1
LN
1.6
1.8
2.0
2.2
2.4
10 −20
0
20
40
5°
5°
1: Anode 2: Cathode
60
80
100
Forward Current
Forward Voltage
Ambient Temperature
Relative Luminous Intensity Wavelength Characteristics
Relative Luminous Intensity
100 80 60 40 20 0 300 40° 50° 60° 70° 80° 400 500 600 90° 1...
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