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LNJ806R58RW

Panasonic Semiconductor

InGaAIP S-GW Type

Ultra Hight Bright Surface Mounting Chip InGaAIP S-GW Type LED 0.5 ± 0.1 1.7 Unit: mm 0.3 ± 0.1 2.9 LNJ416K54RW ····...


Panasonic Semiconductor

LNJ806R58RW

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Description
Ultra Hight Bright Surface Mounting Chip InGaAIP S-GW Type LED 0.5 ± 0.1 1.7 Unit: mm 0.3 ± 0.1 2.9 LNJ416K54RW ········· LNJ416K54RW ········ Amber LNJ806R58RW ········· LNJ806R58RW ········ Orange 2 1.25 Conventional Part No. Global Prat No. Lighting Color 1 5° 5° (0.11) Lighting Color PD(mW) IF(mA) IFP(mA)∗ VR(V) Topr(°C) Tstg(°C) Amber 50 20 60 4 −25 ∼ +85 −30 ∼ +100 Orange 50 20 60 4 −25 ∼ +85 −30 ∼ +100 IFP. duty 10% Pulse width 1 msec. The condition of IFP is duty 10%, Pulse width 1 msec 2° 2° 1 2 0.2 − 0.1 0 ± 0.05 0.9 + s Adsolute Maximum Ratings (Ta = 25°C) 0.6 s Electro−Optical Characteristics (Ta = 25°C) Conventional Lighting IO Lens Color Part No. Color Typ Min LNJ406K54RW Amber Yellow Diffused 8.5 3.5 LNJ806R58RW Orange Red Diffused 5.0 2.0 Unit mcd mcd − − VF IF 10 10 mA Typ 2.0 1.9 V Max 2.3 2.3 V λP Typ 595 620 nm ∆λ Typ 15 17 nm IR IF 10 10 mA Max 100 100 µA VR 4 4 V IO  IF 30 RW IF  VF 100 IO  Ta Relative Luminous Intensity 500 300 10 50 6R 58R W LN J40 6K 54R W Luminous Intensity 5 3 LN J4 L 8 NJ 06 R Forward Current K 06 54 RW 58 30 J80 10 5 3 100 50 30 1 0.5 0.3 LNJ80 6R58R W LNJ4 06K5 4RW 0.1 1 3 5 10 30 50 100 300 1 LN 1.6 1.8 2.0 2.2 2.4 10 −20 0 20 40 5° 5° 1: Anode 2: Cathode 60 80 100 Forward Current Forward Voltage Ambient Temperature Relative Luminous Intensity Wavelength Characteristics Relative Luminous Intensity 100 80 60 40 20 0 300 40° 50° 60° 70° 80° 400 500 600 90° 1...




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