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CPH6531 Dataheets PDF



Part Number CPH6531
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP Epitaxial Planar Silicon Transistor
Datasheet CPH6531 DatasheetCPH6531 Datasheet (PDF)

www.DataSheet4U.com Ordering number : ENA0521 CPH6531 SANYO Semiconductors DATA SHEET CPH6531 Applications • PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications Relay drivers, lamp drivers, motor drivers, flash. Features • • • Composite type with two PNP transistors contained in one package facilitating high-density mounting. The two chips contained are equivalent to the CPH3116. Ultrasmall package permitting applied sets to be small and slim. Specifications Absolut.

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www.DataSheet4U.com Ordering number : ENA0521 CPH6531 SANYO Semiconductors DATA SHEET CPH6531 Applications • PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications Relay drivers, lamp drivers, motor drivers, flash. Features • • • Composite type with two PNP transistors contained in one package facilitating high-density mounting. The two chips contained are equivalent to the CPH3116. Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC PT Tj Tstg Mounted on a ceramic board (600mm2✕0.8m) 1unit Mounted on a ceramic board (600mm2✕0.8m) Conditions Ratings -50 -50 -50 --5 --1.0 --2 --200 0.9 1.1 150 --55 to +150 Unit V V V V A A mA W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=--40V, IE=0A VEB=--4V, IC=0A VCE=--2V, IC=--100mA VCE=--10V, IC=--300mA VCB=--10V, f=1MHz 200 420 9 Ratings min typ max --0.1 --0.1 560 MHz pF Unit µA µA Marking : ES Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11007EA TI IM TC-00000426 No. A0521-1/4 CPH6531 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turm-ON Time Storage Time Fall Time Symbol VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=-500mA, IB=-10mA IC=-300mA, IB=-6mA IC=-500mA, IB=-10mA IC=-10µA, IE=0A IC=-100µA, RBE=0Ω IC=-1mA, RBE=∞ IE=--10µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specifie.


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