CM800E6C-66H

www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM800E6C-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800E6C-66H q IC ................................................................... 800A q VCES ....................................................... 3300V q Insulated Type q 1-element in a Pack (for brake) q AISiC Baseplate APPLICATION Traction drives, DC choppers, Dynamic braking choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 57 ±0.1 190 ±0.5 171 ±0.1 57 ±0.1 57 ±0.1 6 - M8 NUTS C 20 –0.2 +0.1 C C K (C) G E 124 ±0.1 140 ±0.5 40 ±0.2 E E A (E) C C C CM E E E CIRCUIT DIAGRAM C E G 20.25 ±0.2 41.25 ±0.3 3 - M4 NUTS 79.4 ±0.3 61.5 ±0.3 61.5 ±0.3 13 ±0.2 5 ±0.15 38 +1 0 screwing depth min. 16.5 8 - φ7 ±0.1 MOUNTING HOLES 15 ±0.2 40 ±0.3 5.2 ±0.2 29.5 ±0.5 screwing depth min. 7.7 28 +1 0 LABEL HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM800E6C-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM(Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width VGE = 0V, Tj = 25°C ...