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www.DataSheet4U.com
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. ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som
ARY LIMIN
MITSUBISHI HVIGBT MODULES
CM1200HA-66H
HIGH POWER SWITCHING USE INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar
Transistor) Modules
CM1200HA-66H
q IC ................................................................ 1200A q VCES ....................................................... 3300V q Insulated Type q 1-element in a pack
APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57±0.25
190 171 57±0.25
57±0.25
6 - M8 NUTS
20
E
E 40 124±0.25 140 G C
C
C
C
C
CM
E
E
E
C
E
G
CIRCUIT DIAGRAM
20.25 41.25 3 - M4 NUTS 79.4 8 - φ 7MOUNTING HOLES
61.5 13
61.5 5.2 38
15 40
28
HVIGBT MODULES (High Voltage Insulated Gate Bipolar
Transistor Modules)
5
LABEL
30
Aug.1998
PRE
. ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som
ARY LIMIN
MITSUBISHI HVIGBT MODULES
CM1200HA-66H
HIGH POWER SWITCHING USE INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar
Transistor) Modules
MAXIMUM RATINGS (Tj = 25°C)
Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weig...
