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LNJ408K84RA

Panasonic Semiconductor

InGaAIP SS Type

Ultra Hight Bright Surface Mounting Chip InGaAIP SS Type LED 1.6 ± 0.2 (0.2) 0.8 ± 0.1 Unit: mm Conventional Part No...


Panasonic Semiconductor

LNJ408K84RA

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Description
Ultra Hight Bright Surface Mounting Chip InGaAIP SS Type LED 1.6 ± 0.2 (0.2) 0.8 ± 0.1 Unit: mm Conventional Part No. Global Prat No. Lighting Color LNJ408K84RA ·········· LNJ408K84RA ········· Amber LNJ808R88RA ·········· LNJ808R88RA ········· Orange 0.8 ± 0.1 1.1 ± 0.1 0.25 ± 0.1 0.9 ± 0.1 s Adsolute Maximum Ratings (Ta = 25°C) Lighting Color PD(mW) IF(mA) IFP(mA)∗ VR(V) Topr(°C) Tstg(°C) Amber 50 20 60 4 −25 ∼ +85 −30 ∼ +100 Orange 50 20 60 4 −25 ∼ +85 −30 ∼ +100 IFP. duty 10% Pulse width 1 msec. The condition of IFP is duty 10%, Pulse width 1 msec 1 1.0 ± 0.1 1 2 2 1: Anode 2: Cathode s Electro−Optical Characteristics (Ta = 25°C) Conventional Lighting IO Lens Color Part No. Color Typ Min LNJ408K84RA Amber Yellow Diffused 10.5 4.0 LNJ808R88RA Orange Red Diffused 6.5 2.5 Unit mcd mcd − − VF IF 10 10 mA Typ 2.0 1.9 V Max 2.3 2.3 V λP Typ 595 620 nm ∆λ Typ 15 17 nm IR IF 10 10 mA Max 100 100 µA VR 4 4 V IOIF 30 84 RA IF  VF 100 IO  Ta Relative Luminous Intensity 500 300 10 Forward Current Luminous Intensity 88R 5 3 J LN A 8R J80 4 K 08 50 30 8K LN 10 5 3 84R RA 88 8R 0 J8 LN A LN 1 0.5 0.3 J40 100 50 30 LNJ8 08R88 RA LNJ4 08K8 4RA 0.1 1 3 5 10 30 50 100 300 1 1.6 1.8 2.0 2.2 2.4 10 −20 0 20 40 60 80 100 Forward Current Forward Voltage Ambient Temperature Relative Luminous Intensity Wavelength Characteristics Relative Luminous Intensity 100 80 60 40 20 0 500 40° 50° 60° 70° 80° 600 700 800 90° 100 80 60 40 20 LNJ...




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