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SEMICONDUCTOR
TECHNICAL DATA
KHB9D5N20P1/F1/F2
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
A
KHB9D5N20P1
O C F E G B Q I K M L J D N N H P
DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O
1 2 3
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies.
FEATURES
VDSS=200V, ID=9.5A Drain-Source ON Resistance : RDS(ON)=400m Qg(typ.)=18.5nC @VGS = 10V
15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 +
1. GATE 2. DRAIN 3. SOURCE
P Q
TO-220AB
MAXIMUM RATING (Tc=25
)
RATING
A F
KHB9D5N20F1
C
CHARACTERISTIC
SYMBOL
KHB9D5N20F1 UNIT KHB9D5N20P1 KHB9D5N20F2
E
O
DIM
B
MILLIMETERS
Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25
VDSS VGSS ID IDP EAS EAR dv/dt 87 PD 0.7 Tj Tstg 9.5 38
200 30 9.5*
V V A 38*
K
L
M J
R
180 8.7 5.5 40 0.32 150 -55 150
mJ mJ
Q
D N N
H
V/ns W W/
1
2
3
A B C D E F G H J K L M N O Q R
_ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 + _ 0.1 3.3 + _ 12.57 + 0.2 _ 0.1 0.5 + 13.0 MAX _ 0.1 3.23 + 1.47 MAX 1.47 MAX _ 0.2 2.54 + _ 0.2 6.68 + _ 0.2 4.7 + _ 0.2 2.76 +
G
1. GATE 2. DRAIN 3. SOURCE
TO-220IS (1)
KHB9D5N20F2
A F C
Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient
S
P
RthJA
62.5
62.5
/W
K L L R
G
B
RthJC
1.44
3.13
/W
E
DIM
MILLIMETERS
PIN CONNECTION
D
M D
D
N N H
G
1
2
3
A B C D E F G H J K L M N P Q R S
_ 0.3 10.0 + _ 0.3 15.0 + _ 0.3 2.70 + 0.76+0.09/-0.05 _ 0.2 Φ3.2 + _ 0.3 3.0 + _ 0.3 12.0 + 0.5+0.1/-0.05 _ 0.5 13.6 + _ 0.2 3.7 + 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 0.1 2.54 + _ 0.1 6.8 + _ 0.2 4.5 + _ 0.2 2.6 + 0.5 Typ
Q
J
1. GATE 2. DRAIN 3. SOURCE
S
TO-220IS
2007. 5. 10
Revision No : 0
1/7
KHB9D5N20P1/F1/F2
ELECTRICAL CHARACTERISTICS (Tc=25
CHARACTERISTIC
)
TEST CONDITION MIN. TYP. MAX. UNIT
SYMBOL
Static
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Drain Cut-off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance BVDSS BVDSS/ Tj Vth IDSS IGSS RDS(ON) gFS ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=VGS, ID=250 A VDS=200V, VGS=0V, VGS= 30V, VDS=0V VGS=10V, ID=4.75A VDS=40V, ID=4.75A (Note4) 200 2.0 0.19 345 6.7 4.0 1 100 400 V V/ V A nA m S
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS VGS