DatasheetsPDF.com

KHB9D5N20P1 Dataheets PDF



Part Number KHB9D5N20P1
Manufacturers KEC
Logo KEC
Description (KHB9D5N20F1/F2/P1) N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet KHB9D5N20P1 DatasheetKHB9D5N20P1 Datasheet (PDF)

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KHB9D5N20P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A KHB9D5N20P1 O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies. FEATURES VDSS=200V, I.

  KHB9D5N20P1   KHB9D5N20P1


Document
www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KHB9D5N20P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A KHB9D5N20P1 O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies. FEATURES VDSS=200V, ID=9.5A Drain-Source ON Resistance : RDS(ON)=400m Qg(typ.)=18.5nC @VGS = 10V 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 + 1. GATE 2. DRAIN 3. SOURCE P Q TO-220AB MAXIMUM RATING (Tc=25 ) RATING A F KHB9D5N20F1 C CHARACTERISTIC SYMBOL KHB9D5N20F1 UNIT KHB9D5N20P1 KHB9D5N20F2 E O DIM B MILLIMETERS Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 VDSS VGSS ID IDP EAS EAR dv/dt 87 PD 0.7 Tj Tstg 9.5 38 200 30 9.5* V V A 38* K L M J R 180 8.7 5.5 40 0.32 150 -55 150 mJ mJ Q D N N H V/ns W W/ 1 2 3 A B C D E F G H J K L M N O Q R _ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 + _ 0.1 3.3 + _ 12.57 + 0.2 _ 0.1 0.5 + 13.0 MAX _ 0.1 3.23 + 1.47 MAX 1.47 MAX _ 0.2 2.54 + _ 0.2 6.68 + _ 0.2 4.7 + _ 0.2 2.76 + G 1. GATE 2. DRAIN 3. SOURCE TO-220IS (1) KHB9D5N20F2 A F C Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient S P RthJA 62.5 62.5 /W K L L R G B RthJC 1.44 3.13 /W E DIM MILLIMETERS PIN CONNECTION D M D D N N H G 1 2 3 A B C D E F G H J K L M N P Q R S _ 0.3 10.0 + _ 0.3 15.0 + _ 0.3 2.70 + 0.76+0.09/-0.05 _ 0.2 Φ3.2 + _ 0.3 3.0 + _ 0.3 12.0 + 0.5+0.1/-0.05 _ 0.5 13.6 + _ 0.2 3.7 + 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 0.1 2.54 + _ 0.1 6.8 + _ 0.2 4.5 + _ 0.2 2.6 + 0.5 Typ Q J 1. GATE 2. DRAIN 3. SOURCE S TO-220IS 2007. 5. 10 Revision No : 0 1/7 KHB9D5N20P1/F1/F2 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Drain Cut-off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance BVDSS BVDSS/ Tj Vth IDSS IGSS RDS(ON) gFS ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=VGS, ID=250 A VDS=200V, VGS=0V, VGS= 30V, VDS=0V VGS=10V, ID=4.75A VDS=40V, ID=4.75A (Note4) 200 2.0 0.19 345 6.7 4.0 1 100 400 V V/ V A nA m S Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS VGS


KHB9D5N20F2 KHB9D5N20P1 KIB6990T


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)