KHB019N20F2

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KHB019N20P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A KHB019N20P1 O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters and switching mode power supplies. FEATURES VDSS=200V, ID=19A Drain-Source ON Resistance : RDS(ON)=0.18 Qg(typ.)=35nC @VGS = 10V 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 + 1. GATE 2. DRAIN 3. SOURCE P Q MAXIMUM RATING (Tc=25 ) RATING TO-220AB CHARACTERISTIC SYMBOL KHB019N20P1 KHB019N20F1 UNIT KHB019N20F2 V V 19* 12.1* 76* A K L E KHB019N20F1 A F C B Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 140 1.12 19 12.1 76 30 O Drain-Source Voltage VDSS 200 DIM MILLIMETERS M J R 250 14 4.5 50 0.4 150 -55 150 mJ D mJ V/ns Q 1 N N H 2 3 A B C D E F G H J K L M N O Q R _ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 + _ 0.1 3.3 + _ 12.57 + 0.2 _ 0.1 0.5 + 13.0 MAX _ ...