ECH8620

www.DataSheet4U.com Ordering number : ENA0659 ECH8620 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8620 Features General-Purpose Switching Device Applications The ECH8620 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit Mounted on a ceramic board (900mm2✕0.8mm) Conditions N-channel 100 ±20 2 12 1.3 1.5 150 --55 to +150 P-channel --100 ±20 --1.5 -12 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 ID=1mA, VGS=0V VDS=100V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=10V ID=0.5A, VGS=4V 100 1 ±10 1.2 1.6 2.7 200 230 260 325 2.6 V µA µA V S mΩ mΩ Symbol Conditions Ratings min typ max Unit Marking : FN Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contai...