ECH8619

www.DataSheet4U.com Ordering number : ENA0658 ECH8619 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8619 Features General-Purpose Switching Device Applications The ECH8619 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit Mounted on a ceramic board (900mm2✕0.8mm) Conditions N-channel 60 ±20 3 20 1.3 1.5 150 --55 to +150 P-channel -60 ±20 --2 -20 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1.5A ID=1.5A, VGS=10V ID=0.5A, VGS=4V 60 1 ±10 1.2 2.2 3.8 70 92 93 133 2.6 V µA µA V S mΩ mΩ Symbol Conditions Ratings min typ max Unit Marking : FM Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained he...