CPH6605

www.DataSheet4U.com Ordering number : ENN7183 CPH6605 N-Channel and P-Channel Silicon MOSFETs CPH6605 Load Switching Applications Features Package Dimensions Dual chip device for high-density mounting. unit : mm One of the encapsulated devices is a P-channel MOSFET 2202 featuring low ON-resistance and high-speed switching. The other is an N-channel small signal MOSFET used for driving the P-channel MOSFET. Optimal for load switch use. Excellent ON-resistance characteristic. 2.5V drive. [CPH6605] 6 5 4 0.6 0.05 1.6 2.8 0.2 P-channel -20 ±10 --1.5 --6.0 0.8 150 --55 to +150 2.9 0.15 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions N-channel 30 ±10 0.65 2.6 0.7 0.9 0.2 3 0.95 0.6 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : CPH6 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=100µA VDS=10V, ID=150mA ID=150mA, ...