P-Channel Silicon MOSFET General-Purpose Switching Device
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Ordering number : ENA0091
CPH3341
P-Channel Silicon MOSFET
CPH3341
Features
• • •
General-Purpo...
Description
www.DataSheet4U.com
Ordering number : ENA0091
CPH3341
P-Channel Silicon MOSFET
CPH3341
Features
General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh-speed switching. 4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --30 ±20 --5 --20 1.2 150 --55 to +150 Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=--1mA, VGS=0V VDS=-30V, VGS=0V VGS=±16V, VDS=0V VDS=-10V, ID=--1mA VDS=-10V, ID=-2.5A ID=--2.5A, VGS=-10V ID=--1A, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min --30 --1 ±10 --1.2 3.7 6.2 35 67 1115 215 191 15 22 98 55 45 94 --2.6 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns
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