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CPH3144 Dataheets PDF



Part Number CPH3144
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP / NPN Epitaxial Planar Silicon Transistors
Datasheet CPH3144 DatasheetCPH3144 Datasheet (PDF)

www.DataSheet4U.com Ordering number : ENN8165 CPH3144 / CPH3244 CPH3144 / CPH3244 Applications • PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). High allowable power dissipation. S.

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www.DataSheet4U.com Ordering number : ENN8165 CPH3144 / CPH3244 CPH3144 / CPH3244 Applications • PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). High allowable power dissipation. Specifications ( ) : CPH3144 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) Conditions Ratings (--30)40 (--)30 (--)5 (--)2 (--)5 (--)400 0.9 150 --55 to +150 Unit V V V A A mA W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=(--)30V, IE=0 VEB=(--)4V, IC=0 VCE=(--)2V, IC=(-)100mA VCE=(--)10V, IC=(--)300mA VCB=(--)10V, f=1MHz 200 (440)400 (17)12 Ratings min typ max (--)0.1 (--)0.1 560 MHz pF Unit µA µA Marking : CPH3144 : BD, CPH3244 : DP Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2004EA TS IM TB-00000973 No.8165-1/4 CPH3144 / CPH3244 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=(--)1.5A, IB=(--)75mA IC=(--)1.5A, IB=(--)75mA IC=(--)10µA, IE=0 IC=(--)1mA, RBE=∞ IE=(-)10µA, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (--30)40 (--)30 (--)5 (45)40 (200)350 (23)30 Ratings min typ (-170)160 (--)0.94 max (--260)240 (--)1.2.


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