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CPH3240 Dataheets PDF



Part Number CPH3240
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP / NPN Epitaxial Planar Silicon Transistors
Datasheet CPH3240 DatasheetCPH3240 Datasheet (PDF)

www.DataSheet4U.com Ordering number : ENN7907 CPH3140 / CPH3240 PNP / NPN Epitaxial Planar Silicon Transistors CPH3140 / CPH3240 Features • • • • High-Voltage Switching Applications Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. High-speed switching. Ultrasmall size making it easy to provide high-density, small-sized hybrid ICs. ( ) : CPH3140 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter V.

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www.DataSheet4U.com Ordering number : ENN7907 CPH3140 / CPH3240 PNP / NPN Epitaxial Planar Silicon Transistors CPH3140 / CPH3240 Features • • • • High-Voltage Switching Applications Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. High-speed switching. Ultrasmall size making it easy to provide high-density, small-sized hybrid ICs. ( ) : CPH3140 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (--)120 (--)100 (--)6 (--)1 (--)2 Mounted on a ceramic board (600mm2!0.8m) 0.9 150 --55 to +150 Unit V V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Conditions VCB=(--)100V, IE=0 VEB=(--)4V, IC=0 VCE=(--)5V, IC=(-)100mA VCE=(--)10V, IC=(--)100mA VCB=(--)10V, f=1MHz IC=(--)400mA, IB=(--)40mA IC=(--)400mA, IB=(--)40mA IC=(--)10µA, IE=0 IC=(--)1mA, RBE=∞ IE=(--)10µA, IC=0 (--)120 (--)100 (--)6 Ratings min typ max (-)100 (-)100 140 120 (13)8.5 (-0.2)0.1 (--)0.85 (-0.6)0.4 (--)1.2 400 MHz pF V V V V V Unit nA nA Marking CPH3140 : BB CPH3240 : DL Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 61504 TS IM TA-100899 No.7907-1/4 CPH3140 / CPH3240 Continued from preceding page. Parameter Turn-ON Time Storage Time Fall Time Symbol ton tstg tf Conditions See specified test circuit. See specified test circuit. See specified test circuit. Ratings min typ (80)80 (700)850 (40)50 max Unit ns ns ns Package Dimensions unit : mm 2150A 2.9 0.4 0.6 Switching Time Test Circuit 3 0.2 0.15 PW=20µs D.C.≤1% INPUT IB1 OUTPUT IB2 VR 50.


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