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Ordering number : EN8642
2SK4043LS
N-Channel Silicon MOSFET
2SK4043LS
Features
• • •
General-Purpose Switching Device Applications
Low ON-resistance. 2.5V drive. Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 30 ±10 20 80 2.0 20 150 --55 to +150 147 20 Unit V V A A W W °C °C mJ A
Note : *1 VDD=10V, L=500µH, IAV=20A *2 L≤500µH, Single pulse
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS= ±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=10A ID=10A, VGS=4V ID=10A, VGS=2.5V Ratings min 30 1 ±10 0.4 15 25 16 17 21 24 1.3 typ max Unit V
µA µA
V S mΩ mΩ
Marking : K4043
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1805QA MS IM TB-00001889 No.8642-1/4
2SK4043LS
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=15V, VGS=4V, ID=20A VDS=15V, VGS=4V, ID=20A VDS=15V, VGS=4V, ID=20A IS=20A, VGS=0V Ratings min typ 3000 360 300 27 190 370 280 37 3.9 12.6 1.0 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Package Dimensions unit : mm 7509-002
10.0 3.2 4.5 2.8
3.5
7.2 16.0
16.1
0.9 1.2 0.75
3.6
1.2
14.0
0.7
1 2 3
2.4
1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS)
2.55
2.55
Switching Time Test Circuit
VIN 4V 0V VIN PW=10µs D.C.≤1% ID=10A RL=1.5Ω VDD=15V
0.6
Avalanche Resistance Test Circuit
L ≥50Ω
D
VOUT
2SK4043LS
G
4V 0V
50Ω
VDD
2SK4043LS P.G 50Ω
S
No.8642-2/4
2SK4043LS
40
ID -- VDS
3 .0
2. 0V
25° C
1.0
Tc=25°C
40 35 30 25 20 15
ID -- VGS
VDS=10V
75° C
2.0
35 30 25 20 15 10 5
V
2 .5
V
V
Drain Current, ID -- A
Drain Current, ID -- A
4 .0
1.5V
5
VGS=1.0V
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0 0.5
Tc =
75 °C
10
25° --25°C C
1.5
Tc= --
V
25 ° C
3 .5
2.5 IT10262
Drain-to-Source Voltage, VDS -- V
40
IT10261 40
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
ID=10A
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10
35 30 25 20 15 10 5 0 --50
Tc=75°C 25°C --25°C
V =2.5 VGS , A 0 I D=1 4.0V S= 0A, VG 1 = ID
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
7
yfs -- ID
IT10263 7 5 3 2
Case Temperature, Tc -- °C
IT10264
IS -- VSD
VGS=0V
Forward Transfer Admittance, yfs -- S
5 3 2
VDS=10V
10 7 5 3 2
Tc
-25 =-
°C
75
Source Current, IS -- A
25
°C
10 7 5 3 2 1.0 7 5 3 2
°C
3 2 1.0 0.1 0.01 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 0 0.3
Tc=7 5
0.6
--25°C
0.9
°C 25°C
0.1 7 5
1.2
1.5 IT10266
Drain Current, ID -- A
1000 7
IT10265 10000 7 5
SW Time -- ID
td (off)
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
5 3 2
VDD=15V VGS=4V
tf
Ciss, Coss, Crss -- pF
3 2
100 7 5 3 2
tr
1000 7 5 3 2
Coss
td(on)
Crss
10 0.1
100 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0 5 10 15 20 25 30 IT10268
Drain Current, ID -- A
IT10267
Drain-to-Source Voltage, VDS -- V
No.8642-3/4
2SK4043LS
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 5 10 15 20 25 30 35 40
VGS -- Qg
VDS=15V ID=20A
2 100 7 5
ASO
IDP=80A
≤10µs
Gate-to-So.