DatasheetsPDF.com

2SK4043LS Dataheets PDF



Part Number 2SK4043LS
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description N-Channel Silicon MOSFET
Datasheet 2SK4043LS Datasheet2SK4043LS Datasheet (PDF)

www.DataSheet4U.com Ordering number : EN8642 2SK4043LS N-Channel Silicon MOSFET 2SK4043LS Features • • • General-Purpose Switching Device Applications Low ON-resistance. 2.5V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol.

  2SK4043LS   2SK4043LS


Document
www.DataSheet4U.com Ordering number : EN8642 2SK4043LS N-Channel Silicon MOSFET 2SK4043LS Features • • • General-Purpose Switching Device Applications Low ON-resistance. 2.5V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 30 ±10 20 80 2.0 20 150 --55 to +150 147 20 Unit V V A A W W °C °C mJ A Note : *1 VDD=10V, L=500µH, IAV=20A *2 L≤500µH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS= ±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=10A ID=10A, VGS=4V ID=10A, VGS=2.5V Ratings min 30 1 ±10 0.4 15 25 16 17 21 24 1.3 typ max Unit V µA µA V S mΩ mΩ Marking : K4043 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1805QA MS IM TB-00001889 No.8642-1/4 2SK4043LS Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=15V, VGS=4V, ID=20A VDS=15V, VGS=4V, ID=20A VDS=15V, VGS=4V, ID=20A IS=20A, VGS=0V Ratings min typ 3000 360 300 27 190 370 280 37 3.9 12.6 1.0 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm 7509-002 10.0 3.2 4.5 2.8 3.5 7.2 16.0 16.1 0.9 1.2 0.75 3.6 1.2 14.0 0.7 1 2 3 2.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) 2.55 2.55 Switching Time Test Circuit VIN 4V 0V VIN PW=10µs D.C.≤1% ID=10A RL=1.5Ω VDD=15V 0.6 Avalanche Resistance Test Circuit L ≥50Ω D VOUT 2SK4043LS G 4V 0V 50Ω VDD 2SK4043LS P.G 50Ω S No.8642-2/4 2SK4043LS 40 ID -- VDS 3 .0 2. 0V 25° C 1.0 Tc=25°C 40 35 30 25 20 15 ID -- VGS VDS=10V 75° C 2.0 35 30 25 20 15 10 5 V 2 .5 V V Drain Current, ID -- A Drain Current, ID -- A 4 .0 1.5V 5 VGS=1.0V 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0 0.5 Tc = 75 °C 10 25° --25°C C 1.5 Tc= -- V 25 ° C 3 .5 2.5 IT10262 Drain-to-Source Voltage, VDS -- V 40 IT10261 40 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc ID=10A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 35 30 25 20 15 10 5 0 --50 Tc=75°C 25°C --25°C V =2.5 VGS , A 0 I D=1 4.0V S= 0A, VG 1 = ID --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 7 yfs -- ID IT10263 7 5 3 2 Case Temperature, Tc -- °C IT10264 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S 5 3 2 VDS=10V 10 7 5 3 2 Tc -25 =- °C 75 Source Current, IS -- A 25 °C 10 7 5 3 2 1.0 7 5 3 2 °C 3 2 1.0 0.1 0.01 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 0 0.3 Tc=7 5 0.6 --25°C 0.9 °C 25°C 0.1 7 5 1.2 1.5 IT10266 Drain Current, ID -- A 1000 7 IT10265 10000 7 5 SW Time -- ID td (off) Ciss, Coss, Crss -- VDS f=1MHz Ciss Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 5 3 2 VDD=15V VGS=4V tf Ciss, Coss, Crss -- pF 3 2 100 7 5 3 2 tr 1000 7 5 3 2 Coss td(on) Crss 10 0.1 100 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0 5 10 15 20 25 30 IT10268 Drain Current, ID -- A IT10267 Drain-to-Source Voltage, VDS -- V No.8642-3/4 2SK4043LS 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 5 10 15 20 25 30 35 40 VGS -- Qg VDS=15V ID=20A 2 100 7 5 ASO IDP=80A ≤10µs Gate-to-So.


2SK4044 2SK4043LS 2SK4062LS


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)