2SK2618LS

Ordering number : EN8614 2SK2618LS 2SK2618LS N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features Low ON-resistance. Low Qg. Ultrahigh-speed switching. Micaless package facilitating mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta=25°C Tc=25°C Conditions Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Ciss Coss Crss Qg ID=1mA, VGS=0V VDS=500V, VGS=0V VGS=±30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3A ID=3A, VGS=15V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=200V, VGS=10V, ID=5A Ratings 500 ±30 5 20 2.0 30 150 --55 to +150 Unit V V A A W W °C °C min 500 3.5 1.5 Ratings typ max Unit V 1.0 mA ±100 nA 5.5 V 3.0 S 0.95 1.25 Ω 700 pF 250 pF 120 pF 20 nC Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's cont...