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2SK2613 Dataheets PDF



Part Number 2SK2613
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet 2SK2613 Datasheet2SK2613 Datasheet (PDF)

www.DataSheet4U.com 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSIII) 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications · · · · Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: ïYfsï = 6.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 800 V) Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drai.

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www.DataSheet4U.com 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSIII) 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications · · · · Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: ïYfsï = 6.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 800 V) Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 1000 1000 ±30 8 24 150 910 8 15 150 -55~150 Unit V V V A W mJ A mJ °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURSE Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2−16C1B Weight: 4.6 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.833 50 Unit °C/W °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C, L = 26.3 mH, RG = 25 W, IAR = 8 A Note 3: Repetitive rating: Pulse width limited by max junction temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-08-09 2SK2613 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) ïYfsï Ciss Crss Coss tr ton tf VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±30 V, VDS = 0 V IG = ±10 mA, VDS = 0 V VDS = 800 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 4 A VDS = 20 V, ID = 4 A Min ¾ ±30 ¾ 1000 2.0 ¾ 2.0 ¾ ¾ Typ. ¾ ¾ ¾ ¾ ¾ 1.4 6.0 2000 30 200 20 Max ±10 ¾ 100 ¾ 4.0 1.7 ¾ ¾ ¾ pF Unit mA V mA V V W S ¾ 10 V VGS 0V 4.7 9 ID = 4 A ¾ ¾ ¾ ns ¾ VOUT Turn-ON time Switching time Fall time ¾ RL = 100 W 40 ¾ VDD ~ - 400 V ¾ 30 ¾ ¾ ¾ ¾ ¾ nC Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge toff Duty < = 1%, tw = 10 ms 100 Qg Qgs Qgd VDD ~ - 400 V, VGS = 10 V, ID = 8 A ¾ ¾ ¾ 65 40 25 Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition ¾ ¾ IDR = 8 A, VGS = 0 V IDR = 8 A, VGS = 0 V, dIDR/dt = 100 A/ms Min ¾ ¾ ¾ ¾ ¾ Typ. ¾ ¾ ¾ 1600 24 Max 8 24 -1.9 ¾ ¾ Unit A A V ms mC Marking K2613 ※ ※ Lot .


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