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LNG8B4LPD

Panasonic Semiconductor

4.8 mm GaAsP

Round Type 1.5 Max. NOT SOLDERED φ 4.8 mm GaAsP Conventional Part No. Global Parts No. Lighting Color Unit: mm φ 5.8 ±...


Panasonic Semiconductor

LNG8B4LPD

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Round Type 1.5 Max. NOT SOLDERED φ 4.8 mm GaAsP Conventional Part No. Global Parts No. Lighting Color Unit: mm φ 5.8 ± 0.2 2. 3 R 1.5 φ 4.8 ± 0.2 2.3 2.2 6.7 ± 0.2 2.4 LNG4B4NPY ··········· LNG4B4NPY ··········· Amber LNG8B4LPD ············ LNG8B4LPD ············ Orange 2 − 0.65 Max s Absolute Maximum Ratings (Ta = 25°C) Lighting Color PD(mW) IF(mA) IFP(mA)∗ VR(V) Topr(°C) Tstg(°C) Amber 90 30 150 4 −25 ∼ +85 −30 ∼ +100 −25 ∼ +85 −30 ∼ +100 Orange 90 30 150 3 IFP duty 10% Pulse width 1 msec. The condition of IFP is duty 10%, Pulse width 1 msec 2 − 0.4 ± 0.1 1 2 (1.5) (5.0) 21.5 ± 2.0 0.4 ± 0.1 1: Anode 2: Cathode s Electro−Optical Characteristics (Ta = 25°C) Conventional Part No. LNG4B4NPY LNG8B4LPD Unit Lighting Lens Color Color Amber Clear Orange Clear − − IO Typ 50 80 mcd Min − 30 mcd IF 20 20 mA Typ 2.2 2.1 V VF Max 2.8 2.8 V λP Typ 590 630 nm ∆λ Typ 30 40 nm IR IF 20 20 mA Max 10 10 µA VR 4 3 V IO  IF 1000 500 100 50 IF  VF Relative Luminous Intensity 500 300 IO  Ta Luminous Intensity Forward Current 30 LN G8 B4 LP LN D G4 B4 NP Y LN 100 50 30 10 5 3 Y NP B4 4 G LN G 8B 4L PD 100 50 30 LNG8B4LPD LNG4 B4NP Y 10 1 3 5 10 30 50 100 1 1.6 1.8 2.0 2.2 2.4 10 −20 0 20 40 60 80 100 Forward Current Forward Voltage Ambient Temperature Relative Luminous Intensity Wavelength Characteristics IF  Ta 50 Relative Luminous Intensity 100 80 60 40 20 0 Directive Characteristics 30° 20° 10° 0° 80° 60° 40° 20° 80 60 40 20 ...




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