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2SC6084 Dataheets PDF



Part Number 2SC6084
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Triple Diffused Planar Silicon Transistor
Datasheet 2SC6084 Datasheet2SC6084 Datasheet (PDF)

www.DataSheet4U.com Ordering number : ENA0630 2SC6084 SANYO Semiconductors DATA SHEET 2SC6084 Features • • • • NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse.

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www.DataSheet4U.com Ordering number : ENA0630 2SC6084 SANYO Semiconductors DATA SHEET 2SC6084 Features • • • • NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings 1500 800 5 5 12 1.75 50 150 --55 to +150 Unit V V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Fall Time Symbol ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat) hFE1 hFE2 tf Conditions VCB=800V, IE=0A VCE=1500V, RBE=0Ω IC=100mA, IB=0A VEB=4V, IC=0A IC=2.7A, IB=0.54A IC=2.7A, IB=0.54A VCE=5V, IC=0.5A VCE=5V, IC=3A IC=1.8A, IB1=0.36A, IB2=--0.72A 10 5 7 0.2 µs 800 1.0 3 1.5 Ratings min typ max 10 1.0 Unit µA mA V mA V V Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1306KC TI IM TB-00002398 No. A0630-1/4 2SC6084 Package Dimensions unit : mm (typ) 7507-001 10.2 5.1 2.7 Switching Time Test Circuit 4.5 3.6 1.3 PW=20µs D.C.≤1% INPUT IB1 OUTPUT IB2 VR 50Ω RB + 100µF VBE= --5V + 470µF VCC=200V RL=111Ω 6.3 14.0 15.1 18.0 (5.6) 1.2 0.8 0.4 1 2 3 2.7 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220 2.55 2.55 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 IC -- VCE 1.5 A 1.4A Collector Current, IC -- A 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 IC -- VBE VCE=5V Collector Current, IC -- A Ta=1 2 0°C 25°C 0.8 0.4A 0.6A 0.5A 0.3A 0.2A 0.9A 0.8A 0.7A 1.0A 1.1A 0.1A 0.05A 1.2A 1.3A 1 2 3 4 5 6 7 8 IB=0A 9 10 IT11930 0 0 0.2 0.4 0.6 1.0 1.2 1.4 1.6 Collector-to-Emitter Voltage, VCE -- V 2 hFE -- IC Base-to-Emitter Voltage, VBE -- V 10 --40°C IT11931 VCE(sat) -- IC VCE=5V 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 100 5 3 2 10 7 5 3 2 1.0 0.01 Ta=120°C 25°C --40°C 7 5 3 2 1.0 7 5 3 2 IC / IB=5 DC Current Gain, hFE 25 0.1 7 5 3 0.01 2 3 5 7 0.1 2 3 °C Ta 2 =1 C 0° °C --40 5 7 1.0 2 3 5 7 10 IT11933 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT11932 Collector Current, IC -- A Collector Current, IC -- A No. A0630-2/4 2SC6084 7 5 SW Time -- IC tstg Switching Time, SW Time -- µs 3 2 Switching Time, SW Time -- µs VCC=200V IC / IB2=5 IB2 / IB1=2 R load 10 7 5 3 2 SW Time -- IB2 VCC=200V IC=1.8A IB1=0.36A R load tst g 1.0 7 5 3 2 1.0 7 5 tf 3 2 tf 2 3 5 7 1.0 2 3 5 7 0.1 0.1 0.1 0.1 2 3 5 7 1.0 2 3 IT11935 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Forward Bias A S O ICP=12A IC=5A PC =5 0W Collector Current, IC -- A IT11934 3 Reverse Bias A S O L=500µH IB2= --1.0A Tc=25°C Single pulse Base Current, IB2 -- A PT 2 Collector Current, IC -- A 0µ Collector Current, IC -- A 30 1m s m s 10 DC op er ati on =1 00 s µs 10 7 5 3 2 1.0 7 5 3 2 0.1 10 0.01 7 5 3 Tc=25°C 2 Single pulse 0.001 2 3 5 7 10 1.0 2 3 5 7 100 2 3 Collector-to-Emitter Voltage, VCE -- V 2.0 1.8 1.75 5 7 1000 IT11936 2 3 5 7 100 2 3 5 7 1000 2 3 5 PC -- Ta Collector-to-Emitter Voltage, VCE -- V 60 IT11937 PC -- Tc Collector Dissipation, PC -- W 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Collector Dissipation, PC -- W 50 N 40 o he at sin k 30 20 10 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT11938 Case Temperature, Tc -- °C IT11939 No. A0630-3/4 2SC6084 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To veri.


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