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Ordering number : ENA0630
2SC6084
SANYO Semiconductors
DATA SHEET
2SC6084
Features
• • • •
NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings 1500 800 5 5 12 1.75 50 150 --55 to +150 Unit V V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Fall Time Symbol ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat) hFE1 hFE2 tf Conditions VCB=800V, IE=0A VCE=1500V, RBE=0Ω IC=100mA, IB=0A VEB=4V, IC=0A IC=2.7A, IB=0.54A IC=2.7A, IB=0.54A VCE=5V, IC=0.5A VCE=5V, IC=3A IC=1.8A, IB1=0.36A, IB2=--0.72A 10 5 7 0.2 µs 800 1.0 3 1.5 Ratings min typ max 10 1.0 Unit µA mA V mA V V
Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1306KC TI IM TB-00002398 No. A0630-1/4
2SC6084
Package Dimensions
unit : mm (typ) 7507-001
10.2 5.1
2.7
Switching Time Test Circuit
4.5 3.6 1.3
PW=20µs D.C.≤1% INPUT
IB1 OUTPUT IB2 VR 50Ω RB + 100µF VBE= --5V + 470µF VCC=200V
RL=111Ω
6.3 14.0 15.1
18.0 (5.6)
1.2
0.8
0.4
1 2 3
2.7
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220
2.55
2.55
5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0
IC -- VCE
1.5 A
1.4A
Collector Current, IC -- A
5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
IC -- VBE
VCE=5V
Collector Current, IC -- A
Ta=1 2
0°C 25°C
0.8
0.4A 0.6A 0.5A 0.3A 0.2A 0.9A 0.8A 0.7A
1.0A
1.1A
0.1A 0.05A
1.2A 1.3A
1 2 3 4 5 6 7 8
IB=0A
9 10 IT11930
0 0 0.2 0.4 0.6 1.0 1.2 1.4 1.6
Collector-to-Emitter Voltage, VCE -- V
2
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
10
--40°C
IT11931
VCE(sat) -- IC
VCE=5V
7
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
100 5 3 2 10 7 5 3 2 1.0 0.01
Ta=120°C
25°C --40°C
7 5 3 2 1.0 7 5 3 2
IC / IB=5
DC Current Gain, hFE
25
0.1 7 5 3 0.01 2 3 5 7 0.1 2 3
°C Ta
2 =1
C 0°
°C --40
5 7 1.0 2 3 5 7 10 IT11933
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10 IT11932
Collector Current, IC -- A
Collector Current, IC -- A
No. A0630-2/4
2SC6084
7 5
SW Time -- IC
tstg
Switching Time, SW Time -- µs
3 2
Switching Time, SW Time -- µs
VCC=200V IC / IB2=5 IB2 / IB1=2 R load
10 7 5 3 2
SW Time -- IB2
VCC=200V IC=1.8A IB1=0.36A R load
tst g
1.0 7 5 3 2
1.0 7 5
tf
3 2
tf
2 3 5 7 1.0 2 3 5 7
0.1 0.1
0.1 0.1
2
3
5
7
1.0
2
3 IT11935
3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
Forward Bias A S O
ICP=12A IC=5A
PC =5 0W
Collector Current, IC -- A
IT11934 3
Reverse Bias A S O
L=500µH IB2= --1.0A Tc=25°C Single pulse
Base Current, IB2 -- A
PT
2
Collector Current, IC -- A
0µ
Collector Current, IC -- A
30
1m s
m s 10
DC op er ati on
=1
00
s
µs
10 7 5 3 2 1.0 7 5 3 2 0.1 10
0.01 7 5 3 Tc=25°C 2 Single pulse 0.001 2 3 5 7 10 1.0
2
3
5 7 100
2
3
Collector-to-Emitter Voltage, VCE -- V
2.0 1.8 1.75
5 7 1000 IT11936
2
3
5
7 100
2
3
5
7 1000
2
3
5
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
60
IT11937
PC -- Tc
Collector Dissipation, PC -- W
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160
Collector Dissipation, PC -- W
50
N
40
o
he
at
sin
k
30
20
10
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT11938
Case Temperature, Tc -- °C
IT11939
No. A0630-3/4
2SC6084
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To veri.