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Part Number MB85R256H
Manufacturers Fujitsu Media Devices
Logo Fujitsu Media Devices
Description Memory FRAM CMOS 256 K (32 K X 8) Bit
Datasheet MB85R256H DatasheetMB85R256H Datasheet (PDF)

  MB85R256H   MB85R256H
www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-13106-1E Memory FRAM CMOS 256 K (32 K × 8) Bit MB85R256H ■ DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, MB85R256H is able to retain data without back-up battery. The memory cells used for the MB85R256H has improved at least 1010 times of read/write access per bit, significantly outperforming FLASH memory and E2PROM in durability. The MB85R256H uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM. ■ FEATURES • • • • • • • Bit configuration: 32,768 words x 8 bits Read/write durability: 1010 times/bit (Min) Peripheral circuit CMOS construction Operating power supply voltage: 2.7 V to 3.6 V Operating temperature range: −40 °C to +85 °C 28-pin, SOP flat package 28-pin, TSOP(1) flat package Copyri.



MB85R256 MB85R256H MAX3863


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