Part Number |
MB85R256H |
Manufacturers |
Fujitsu Media Devices |
Logo |
|
Description |
Memory FRAM CMOS 256 K (32 K X 8) Bit |
Datasheet |
MB85R256H Datasheet (PDF) |
www.DataSheet4U.com
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-13106-1E
Memory FRAM
CMOS
256 K (32 K × 8) Bit
MB85R256H
■ DESCRIPTIONS
The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, MB85R256H is able to retain data without back-up battery. The memory cells used for the MB85R256H has improved at least 1010 times of read/write access per bit, significantly outperforming FLASH memory and E2PROM in durability. The MB85R256H uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
■ FEATURES
• • • • • • • Bit configuration: 32,768 words x 8 bits Read/write durability: 1010 times/bit (Min) Peripheral circuit CMOS construction Operating power supply voltage: 2.7 V to 3.6 V Operating temperature range: −40 °C to +85 °C 28-pin, SOP flat package 28-pin, TSOP(1) flat package
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