DatasheetsPDF.com



Part Number MB85R256
Manufacturers Fuji Electric
Logo Fuji Electric
Description Memory FRAM
Datasheet MB85R256 DatasheetMB85R256 Datasheet (PDF)

  MB85R256   MB85R256
www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-13101-3E Memory FRAM CMOS 256 K (32 K × 8) Bit MB85R256 s DESCRIPTIONS The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM MB85R256 is able to retain data without back-up battery. The memory cells used for the MB85R256 has inproved at least 1010 times of read/write access per bit, significantly outperforming FLASH memory and EEPROM in durability. The MB85R256 uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM. s FEATURES • • • • • • • Bit configuration: 32,768 words x 8 bits Read/write durability: 1010 times/bit (Min) Peripheral circuit CMOS construction Operating power supply voltage: 3.0 V to 3.6 V Operating temperature range: −40 °C to +85 °C 28-pin, SOP flat package 28-pin, TSOP(1) flat package s PACKAGES 2.



MB85R1002 MB85R256 MB85R256H


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)