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FUJITSU SEMICONDUCTOR DATA SHEET
DS05-13101-3E
Memory FRAM
CMOS
256 K (32 K × 8) Bit
MB85R256
s DESCRIPTIONS
The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM MB85R256 is able to retain data without back-up battery. The memory cells used for the MB85R256 has inproved at least 1010 times of read/write access per bit, significantly outperforming FLASH memory and EEPROM in durability. The MB85R256 uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
s FEATURES
• • • • • • • Bit configuration: 32,768 words x 8 bits Read/write durability: 1010 times/bit (Min) Peripheral circuit CMOS construction Operating power supply voltage: 3.0 V to 3.6 V Operating temperature range: −40 °C to +85 °C 28-pin, SOP flat package 28-pin, TSOP(1) flat package
s PACKAGES
2.