Part Number |
MB85R1001 |
Manufacturers |
Fujitsu Media Devices |
Logo |
|
Description |
1 M Bit (128 K X 8) |
Datasheet |
MB85R1001 Datasheet (PDF) |
www.DataSheet4U.com
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-13103-2E
Memory FRAM
CMOS
1 M Bit (128 K × 8)
MB85R1001
■ DESCRIPTIONS
The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, MB85R1001 is able to retain data without back-up battery. The memory cells used for the MB85R1001 has improved at least 1010 times of read/write access, significantly outperforming FLASH memory and E2PROM in endurance. The MB85R1001 used a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
■ FEATURES
• • • • • Bit configuration : 131,072 words x 8bits Read/write endurance : 1010 times Operating power supply voltage : 3.0 V to 3.6 V Operating temperature range : -20 °C to +85 °C 48-pin, TSOP (1) plastic package
■ PACKAGE
48-pin plastic TSOP(1)
(FPT-48P-M25)
MB85R1001
■ PIN ASSIGNMENTS
(TOP VI.