HA31005ANP

www.DataSheet4U.com HA31005ANP SiGe MMIC High Frequency Power Amplifier REJ03F0173-0200 Rev.2.00 Jul 31, 2007 Features Ideal for IEEE802.11a / b / g / n applications. e.g. Wireless LAN FEM High Gain (24 dB @ 5.2 GHz, 30dB @ 2.4 GHz) Small footprint package. (HWQFN-16 : 3.0 x 3.0 x 0.8 mm) RoHS Compliant Outline RENESAS Package code: PWQN0016KA-B (Package name: HWQFN-16) 17 12 5 765 0 0 1 3 3 4 1 2 9 11 10 8 3 4 1 2 5 6 7 8 13 14 15 16 16 15 14 13 12 11 10 9 1. GND 2. RFout 3. RFout 4. GND 5. GND 6. VB3 7. VB2 8. VB1 9. VCC 10. GND 11. RFin 12. GND 13. VC1 14. GND 15. VC2 16. GND 17. GND Absolute Maximum Ratings (Ta = 25°C) Item Supply Voltage Maximum Current Maximum Input Power Total Power Dissipation Operating Case Temperature Storage Temperature Symbol VCC ICC Pin max Pt Tc(op) Tstg Ratings 4 400 +10 1.4note -10 to +85 –55 to +150 Unit V mA dBm W °C °C Notes: Value on PCB (FR-4 : 20 x 20 x 0.4 mm double side) REJ03F0173-0200 Rev.2.00 Jul 31, 2007 Page 1 of 7 HA31005ANP Electrical Characteristics (Ta = 25°C) Item Supply Voltage Power Gain Circuit Current Output Power Power Gain Circuit Current Output Power Power Gain Circuit Current Output Power Symbol VCC PG1 Icc1 Pout1 PG2 Icc2 Pout2 PG3 Icc3 Pout3 Min. 3 — — — — — — — — — Typ 3.3 24 160 +18 30 110 +18 30 170 +22 Max. 3.6 — — — — — — — — — Unit V dB mA dBm dB mA dBm dB mA dBm Test Conditions f = 5.15 to 5.35 GHz Pout = +18 dBm, Icq = 130 mA f = 5.15 GHz , EVM = 4%, 54 Mbps, 64 QAM_OFDM, Icq = ...