GSBC807

www.DataSheet4U.com ISSUED DATE :2005/06/08 REVISED DATE : GSBC807 Description Package Dimensions PNP EPITAXIAL PLANAR TRANSISTOR The GSBC807 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages. REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 -50 -45 -5 800 225 V V V mA mW Unit Characteristics Symbol BVCBO BVCEO BVCES BVEBO ICES IEBO *VCE(sat) *VBE(on) *hFE fT Cob at Ta = 25 Min. -50 -45 -50 -5 100 Typ. 100 Max. -100 -100 -700 -1.2 630 12 MHz pF Unit V V V V nA nA mV V IC=-100uA IC=-10mA IC=-100uA IE=-100uA VCE=-25V VEB=-4V IC=-500mA, IB=-50mA VCE=-1V, IC=-300mA VCE=-1V, IC=-100mA VCE=-5V, IC=-10mA, f=100MHz VCB=-10V, f=1MHz, IE=0A * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Test Conditions Classification Of hFE Rank Range 9FA 100 - 250 9FB 160 - 400 9FC 250 - 630 1/2 ISSUED DATE :2005/06/08 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to ma...