GSB1132

www.DataSheet4U.com G S B 11 3 2 The GSB1132 is a epitaxial 1/3 P N P E PI TA XI A L SI LI CO N T RA N SI STO R Description planar type PNP silicon transistor . (IC/IB = -500mA / -50 mA) Features Low VCE(sat). VCE(sat) = -0.2V(Typ.) Package Dimensions REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 1.50 1.30 2.40 0.89 4.25 1.70 1.50 2.60 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 1.40 0.35 5 0.52 1.60 0.41 TYP. 0.70 REF. Unit Absolute Maximum Ratings (Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current(DC) Collector Current(PULSE) Collector Power Dissipation (note1) ,unless otherwise specified) Ratings +150 -55 ~ +150 -40 -32 -5 -1 -2 0.5 2 V V V A A W W Tj Tstg VCBO VCEO VEBO IC IC PD Symbol Collector Power Dissipation (note2) PD Note 1:Single pulse, PW=100ms Note 2: When mounted on a 40*40*0.7 mm ceramic board. Electrical Characteristics (Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Min. -40 -32 -5 82 Typ. -0.2 150 20 ,unless otherwise specified) Unit V V V uA uA V MHz pF IC=-50uA IC=-1mA IE=-50uA VCB=-20V VEB=-4V IC=-500mA, IB=-50mA(note) VCE=-3V, IC=-100mA VCE=-5V, IE=-50mA, f=30MHz VCE=-10V, IE=0A, f=1MHz Test Conditions - Max. -0.5 -0.5 -0.5 390 30 Cob Note: Measured using pulse current. Classification Of hFE Rank RANGE P Q 120 - 270 R 180 - 390 82 - 180 2/3 Characteristics Curve 3/3 Important Not...