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GS74116TU

GSI Technology

256K x 16 4Mb Asynchronous SRAM

www.DataSheet4U.com GS74116TP/J/U SOJ, TSOP, FP-BGA Commercial Temp Industrial Temp Features • Fast access time: 8, 10,...


GSI Technology

GS74116TU

File Download Download GS74116TU Datasheet


Description
www.DataSheet4U.com GS74116TP/J/U SOJ, TSOP, FP-BGA Commercial Temp Industrial Temp Features Fast access time: 8, 10, 12, 15ns CMOS low power operation: 170/145/130/110 mA at min.cycle time. Single 3.3V ± 0.3V power supply All inputs and outputs are TTL compatible Byte control Fully static operation Industrial Temperature Option: -40° to 85°C Package line up J: 400mil, 44 pin SOJ package TP: 400mil, 44 pin TSOP Type II package U: 7.20mm x 11.65mm Fine Pitch Ball Grid Array package 256K x 16 4Mb Asynchronous SRAM SOJ 256K x 16 Pin Configuration A4 A3 A2 A1 A0 CE DQ1 DQ2 DQ3 DQ4 VDD VSS DQ5 DQ6 DQ7 DQ8 WE A15 A14 A13 A12 A16 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 8, 10, 12, 15ns 3.3V VDD Center VDD & VSS Top view 44 pin SOJ Description The GS74116 is a high speed CMOS static RAM organized as 262,144-words by 16-bits. Static design eliminates the need for external clocks or timing strobes. Operating on a single 3.3V power supply and all inputs and outputs are TTL compatible. The GS74116 is available in a 7.2x11.65 mm Fine Pitch BGA package, 400 mil SOJ and 400 mil TSOP Type-II packages. 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB DQ16 DQ15 DQ14 DQ13 VSS VDD DQ12 DQ11 DQ10 DQ9 NC A8 A9 A10 A11 A17 Pin Descriptions Symbol A0 to A17 DQ1 to DQ 16 CE LB UB WE OE VDD VSS NC Description Address input Data input/output Chip enable input Lower byte enable input (DQ1 to DQ8) Upper byte enable input (DQ9 to...




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