High Power Output Semiconductor Laser
Semiconductor Laser
LNC803PS
High Power Output Semiconductor Laser
Overview
The LNC803PS is a GaAlAs laser diode which ...
Description
Semiconductor Laser
LNC803PS
High Power Output Semiconductor Laser
Overview
The LNC803PS is a GaAlAs laser diode which provides stable, continuous, single mode oscillation of near infrared light at room temperature. This product can be used in a wide range of light source applications, including laser printers, facsimiles, optical disk memory, and optical information devices.
ø1.0 min. ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1
Unit : mm
2
0.4±0.1
110˚±1˚
LD 1 Junction plane 1.0±0.1 Reference plane Reference slot Kovar glass LD pellet Reference plane ø1.2max. 3-ø0.45 2 1 3 3
PD
Features
Low threshold oscillation Stable single horizontal mode oscillation Built-in PIN photodiode for light output monitors Light output is continuously variable as far as 60 mW Supports direct modulation Near infrared oscillating wavelength Long lifetime, high reliability
1.2±0.1 6.5±0.5
0.5 max.
2.3±0.2 1.27 0.25
ø2.0 Bottom view
1: LD Anode 2: Common Case 3: PD Cathode
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Radiant power Reverse voltage Power dissipation Operating ambient temperature Storage temperature Laser PIN Symbol PO VR VR (PIN) Pd (PIN) Topr Tstg Ratings 40 1.5 30 100 –10 to +60 – 40 to +80 Unit mW V V mW ˚C ˚C
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Threshold current Operating current Operating voltage Oscillation wavelength Radiation angle
Horizontal direction Vertical direction
Symbol Ith IOP VOP λL θ//* θ ⊥* η IR IP θX θY CW
Conditions PO = 32mW PO = 32mW P...
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