LNC705PS

Semiconductor Laser LNC705PS GaAlAs Semiconductor Laser ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1 ø1.0 min. Unit : mm 2 Low threshold current Stable single horizontal mode oscillation Long lifetime, high reliability High optical power output : 50mW 0.4±0.1 110˚±1˚ Features LD 1 Junction plane 1.0±0.1 Reference plane Reference slot 3 PD 2.3±0.2 1.27±0.07 0.25 Applications Optical data processing devices Optical disk memory Optical measuring equipment 1.2±0.1 Reference plane 3-ø0.45 6.5±0.5 2 1 ø2.0 Bottom view 3 1: LD Anode 2: Common Case 3: PD Cathode Absolute Maximum Ratings (Ta = 25˚C) Parameter Radiant power Reverse voltage Power dissipation Operating ambient temperature Storage temperature Laser PIN Symbol PO VR VR (PIN) Pd (PIN) Topr Tstg Ratings 50 2 30 100 –10 to +60 – 40 to +80 Unit mW V V mW ˚C ˚C Electro-Optical Characteristics (Ta = 25˚C) Parameter Threshold current Operating current Operating voltage Oscillation wavelength Radiation angle Horizontal direction Vertical direction Symbol Ith IOP VOP λL θ//*1 θ⊥*1 η IP IR θX θY CW Conditions CW PO = 40mW CW PO = 40mW CW PO = 40mW CW PO = 40mW CW PO = 40mW CW PO = 36mW/I(40mW – 4mW) CW PO = 40mW, VR (PIN) = 5V VR (PIN) = 15V CW PO = 40mW CW PO = 40mW min 10 40 770 7 20 0.7 typ 20 80 2.0 785 9 25 0.9 0.5 max 35 100 2.5 805 13 30 1.2 0.1 Unit mA mA V nm deg. deg. W/A mA µA deg. deg. Differential efficiency PIN photo current Reverse current (DC) Optical axis accuracy *1 X direction Y direction –2.0 –3.0 ...