GI08P10

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/02/21 REVISED DATE : GI08P10 Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -100V 200m -8A The GI08P10 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-251 package is universally preferred for all commercial-industrial through hole applications. *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic *RoHS Compliant Features Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 2 Ratings -100 ±32 -8 -6 -32 45 0.36 100 -8 -55 ~ +150 Unit V V A A A W W/ mJ A Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Operating Junction and Storage Temperature Range EAS IAR Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 2.8 110 Unit /W /W GI08P10 Page: 1/4 ISSUED DATE :2006/02/21 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdo...