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ISSUED DATE :2005/12/12 REVISED DATE :
GESD880
Description Features
NPN EPITAXIAL PLANAR TRANSISTOR
The GESD880 is designed for audio frequency power amplifier application. High DC Current Gain: hFE = 300 (Max.) @ VCE = 5V, IC = 0.5A Low Saturation Voltage: VCE (sat) = 1.0V (Max.) @ IC = 3A, IB = 0.3A
Package Dimensions
REF. A b c D ...
