N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Pb Free Plating Product
ISSUED DATE :2005/12/16 REVISED DATE :
GE50L02
N-CHANNEL ENHANCEMENT MODE ...
Description
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/12/16 REVISED DATE :
GE50L02
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 17m 40A
The GE50L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. *Low Gate Charge *Simple Drive Requirement *Fast Switching Characteristic
Description
Features
Package Dimensions
REF. A b c D E L4 L5
Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60
REF. c1 b1 L e L1 Ø A1
Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current
1
Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg
Ratings 25 ±20 40 27 140 44.6 0.36 -55 ~ +150
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 2.8 62 Unit /W /W
GE50L02
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ISSUED DATE :2005/12/16 REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage T...
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