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GM5401
Description Package Dimensions
1/2 PNP EPITAXIAL PLANAR TRANSISTOR
The GM5401 is designer ...
www.DataSheet4U.com
GM5401
Description Package Dimensions
1/2
PNP EPITAXIAL PLANAR
TRANSISTOR
The GM5401 is designer for general purpose applications requiring high breakdown voltages.
SOT-89
GM
REF. A C D E I H
Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.25 0.35
REF. B J 1 2 3 4 5
Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 -160 -150 -5 -600 1 V V V mA W Unit
Characteristics
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 fT Cob
at Ta = 25
Min. -160 -150 -5 50 60 50 100 Typ. Max. -50 -50 -200 -500 -1 -1 240 6 MHz pF Unit V V V nA nA mV mV V V IC=-100uA, IE =0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-120V , IE=0 VEB=-5V , IC=0 IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA VCE=-10V, IC=-10mA, f=100MHz VCB=-10V, f=1MHz Test Conditions
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Characteristics Curve
2/2
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