www.DataSheet4U.com
S T U/D1855P LS
S amHop Microelectronics C orp.
Aug,18 2005
P -C hannel E nhancement Mode Field E...
www.DataSheet4U.com
S T U/D1855P LS
S amHop Microelectronics C orp.
Aug,18 2005
P -C hannel E nhancement Mode Field E ffect
Transistor
P R ODUC T S UMMAR Y
V DS S
-55V
F E AT UR E S
( m W ) Max
ID
-15A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
73 @ V G S = -10V 90 @ V G S = -4.5V
R ugged and reliable. TO-252 and TO-251 P ackage.
D
D G S
G D
S
G
S TU S E R IE S TO-252AA(D-P AK)
S TD S E R IE S TO-251(l-P AK)
S
AB S OL UTE MAXIMUM R ATINGS
P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed
b a
(T A =25 C unles s otherwis e noted)
S ymbol Vspike d V DS V GS Limit 60 -55 20 -15 -12 -30 -10 42 28 -55 to 150 W C Unit V V V A A A A
25 C 70 C
ID IDM IS PD T J , T S TG
Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C Ta=70 C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC
1 R JA
3 50
C /W C /W
S TU/D1855PLS
ELECTRICAL CHARACTERISTICS (TA 25 C unless = otherwise noted)
Parameter OFF CHARACTERISTICS
5
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS
b
Symbol
Condition
VGS 0V, ID -250uA VDS -44V, VGS 0V VGS 20V, VDS 0V VDS VGS, ID = -250uA VGS -10V, ID -10A VGS -4.5V, ID -6A VDS = -5V, VGS = -10V VDS -15V, ID -10A
Min Typ C Max Unit
-55 -1 100 -1.3
-1.6
62 80
V uA nA V
m-ohm...