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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP50P06KDG
SWITCHING P-CHANNEL POWER MOSFET
DESCRIPTION
T...
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
NP50P06KDG
SWITCHING P-CHANNEL POWER MOSFET
DESCRIPTION
The NP50P06KDG is P-channel MOS Field Effect
Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP50P06KDG-E1-AY NP50P06KDG-E2-AY
Note Note
LEAD PLATING Pure Sn (Tin)
PACKING Tape 800 p/reel
PACKAGE TO-263 (MP-25ZK)
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
Super low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = −10 V, ID = −25 A) RDS(on)2 = 23 mΩ MAX. (VGS = −4.5 V, ID = −25 A) Low input capacitance Ciss = 5000 pF TYP. (TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
−60 m20 m50 m150 90 1.8 175 −55 to +175 32 106
V V A A W W °C °C A mJ
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.67 83.3 °C/W °C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
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