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LNA4905L
GaAs Infrared Light Emitting Diode
Description
Infrared Light Emitting Diodes LNA4905L GaAs Infrared Light Emitting Diode Unit : mm 5.7±0.2 2 Max. Not soldered For optical control equipment s Features High output power, high-efficiency : (15 mW min.) Quick response, high speed modulation (fC=30 MHz typ.) Transparent epoxy resin package φ5±0.2 1 4.4±0.3 1 12.0±1.0 14.0±1.0 5.7±0.2 s Absolute M...
Panasonic Semiconductor
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LNA4905L
GaAs Infrared Light Emitting Diode
- Panasonic Semiconductor
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