LNA4801L

Infrared Light Emitting Diodes LNA4801L GaAlAs Infrared Light Emitting Diode Unit : mm Not soldered 2.0 max. 2-0.8 max. 2-0.5±0.1 0.5±0.1 (1.5) 2.54 1.7 For optical control systems Features Fast response and high-speed modulation capability : fC = 20 MHz (typ.) Wide directivity : θ = 22 deg. (typ.) Transparent epoxy resin package ø3.8±0.2 ø3.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 190 100 1 3 –25 to +85 –30 to +100 Unit mW mA A V ˚C ˚C 1.0 15.0±1.0 4.5±0.3 5.0±0.2 0.6 1 2 1: Anode 2: Cathode f = 100Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Center radiant intensity Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Half-power angle Cutoff frequency * Symbol Ie λP ∆λ VF IR θ fC* Conditions IF = 50mA IF = 50mA IF = 50mA IF = 100mA VR = 3V The angle in which radiant intencity is 50% min 12 typ 860 40 1.6 22 20 max Unit mW/sr nm nm 1.9 10 V µA deg. MHz IFP = 50mA + 10mAp-p Frequency when modulation optical power decreases by 3dB from 1MHz ( PO(fCMHz) 10 log =–3 P O (1MHz) ) 1 LNA4801L Infrared Light Emitting Diodes IF — Ta 120 10 2 IFP — Duty cycle tw = 10µs Ta = 25˚C 10 4 IFP — VF tw = 10µs f = 100Hz Ta = 25˚C IF (mA) IFP (mA) Pulse forward current 1 10 10 2 IFP (A) 100 10 3 10 Allo...