P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Pb Free Plating Product
CORPORATION
GC2307
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2...
Description
www.DataSheet4U.com
Pb Free Plating Product
CORPORATION
GC2307
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2005/06/20 REVISED DATE :
BVDSS RDS(ON) ID
-16V 60m -4.0A
The GC2307 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The GC2307 is universally preferred for all commercial-industrial applications and suited for low voltage applications such as DC/DC converters.
Description
Features
*Simple Drive Requirement *Fast Switching
Package Dimensions
D E S1
TO-92
A
S E A T IN G PLANE
b1
L
REF. A S1 b b1 C
e1
e
b
C
Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51
REF. D E L e1 e
Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current 1 Pulsed Drain Current Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a
Ratings -16 ±8 -4.0 -3.3 -12 1.38 0.01 -55 ~ +150 Ratings 90
Unit V V A A A W W/
Thermal Data
Parameter 3 Thermal Resistance Junction-ambient Max. Unit /W
1/4
CORPORATION
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
ISSUED DATE :2005/06/20 REVISED DATE :
unless otherwise specified)
Min. -16 Typ. -0.01 12 15 1.3 4 8 11 54 36 985 180 160 Max. -1...
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