P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Pb Free Plating Product
ISSUED DATE :2005/05/24 REVISED DATE :
GC2301
P-CHANNEL ENHANCEMENT MODE P...
Description
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/05/24 REVISED DATE :
GC2301
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-20V 130m -2.6A
The GC2301 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The GC2301 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Description
Features
*Simple Drive Requirement *Fast Switching
Package Dimensions
D E S1
TO-92
A
b1 S E A T IN G PLANE
L
REF. A S1 b b1 C
e1
e
b
C
Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51
REF. D E L e1 e
Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a
Ratings -20 ±12 -2.6 -2.1 -10 1.38 0.01 -55 ~ +150 Value 90
Unit V V A A A W W/
Thermal Data
Parameter Thermal Resistance Junction-ambient3 Max. Unit /W
GC2301
Page: 1/4
ISSUED DATE :2005/05/24 REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
unless otherwise specified)
Min. -20 -0.5 Typ. -0.1 4.4 5.2 1.36 0.6 5.2 9.7 19 29 295 170 ...
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