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GC2301

GTM

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/05/24 REVISED DATE : GC2301 P-CHANNEL ENHANCEMENT MODE P...


GTM

GC2301

File Download Download GC2301 Datasheet


Description
www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/05/24 REVISED DATE : GC2301 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 130m -2.6A The GC2301 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The GC2301 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Description Features *Simple Drive Requirement *Fast Switching Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings -20 ±12 -2.6 -2.1 -10 1.38 0.01 -55 ~ +150 Value 90 Unit V V A A A W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Unit /W GC2301 Page: 1/4 ISSUED DATE :2005/05/24 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. -20 -0.5 Typ. -0.1 4.4 5.2 1.36 0.6 5.2 9.7 19 29 295 170 ...




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