www.DataSheet4U.com
ISSUED DATE :2005/10/21 REVISED DATE :
GBC547
Description Features
NPN SILICON TRANSISTOR
The GBC...
www.DataSheet4U.com
ISSUED DATE :2005/10/21 REVISED DATE :
GBC547
Description Features
NPN SILICON
TRANSISTOR
The GBC547 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 110~800 @VCE=5V, IC=2mA Complementary to GBC557
D
Package Dimensions
E S1
TO-92
A
S E A T IN G PLANE
b1
L
REF. A S1 b b1 C
e1
e
b
C
Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51
REF. D E L e1 e
Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66
Absolute Maximum Ratings (TA=25 )
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (continuous) Total Device Dissipation @ TA =25 Derate above 25 Total Device Dissipation @ TC =25 Derate above 25
Operating and Storage Junction Temperature
Symbol VCBO VCEO VEBO IC PD PD TJ, Tstg R JA R JC
Ratings 50 45 6 100 625 5.0 1.5 12 -55 ~ +150 200 83.3
Unit V V V mA mW mW/ W mW/ /W /W
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case
Electrical Characteristics (TA = 25
Symbol BVCBO BVCEO BVEBO ICES *VCE(sat)1 *VCE(sat)2 *VBE(sat) *VBE(on)1 *VBE(on)2 *hFE fT Cob Min. 50 45 6 0.55 110 150 Typ. 0.09 0.2 0.7 300 1.7
unless otherwise noted)
Max. 15 0.25 0.6 0.7 0.77 800 4.5 Unit V V V nA V V V V V MHz pF Test Conditions IC=100uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCE=50V, VBE=0 IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA VCE=5V, IC=2mA VCE=5V, IC=10mA VCE=5V, IC=2mA VCE=5V, IC=10mA, f=100MHz VCB=10V, ...