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GBC337 Dataheets PDF



Part Number GBC337
Manufacturers GTM
Logo GTM
Description NPN SILICON TRANSISTOR
Datasheet GBC337 DatasheetGBC337 Datasheet (PDF)

www.DataSheet4U.com ISSUED DATE :2005/10/21 REVISED DATE : GBC337 Description Features NPN SILICON TRANSISTOR The GBC337 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 100~630 @VCE=1V, IC=100mA Complementary to GBC327 D Package Dimensions E S1 TO-92 A S E A T IN G PLANE b1 L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 .

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www.DataSheet4U.com ISSUED DATE :2005/10/21 REVISED DATE : GBC337 Description Features NPN SILICON TRANSISTOR The GBC337 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 100~630 @VCE=1V, IC=100mA Complementary to GBC327 D Package Dimensions E S1 TO-92 A S E A T IN G PLANE b1 L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings (TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (continuous) Total Device Dissipation @ TA =25 Derate above 25 Total Device Dissipation @ TC =25 Derate above 25 Operating and Storage Junction Temperature Symbol VCBO VCEO VEBO IC PD PD TJ, Tstg R JA R JC Ratings 50 45 5 800 625 5.0 1.5 12 -55 ~ +150 200 83.3 Unit V V V mA mW mW/ W mW/ /W /W Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Electrical Characteristics (TA = 25 Symbol BVCBO BVCEO BVCES BVEBO ICBO ICES IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Cob Min. 50 45 50 5 100 60 Typ. 210 15 unless otherwise noted) Max. 100 100 100 0.7 1.2 630 Unit V V V V nA nA nA V V Test Conditions IC=100uA, IE=0 IC=10mA, IB=0 IC=100uA, IE=0 IE=10uA, IC=0 VCB=30V, IE=0 VCE=45V, VBE=0 VEB=4V, IC=0 IC=500mA, IB=50mA VCE=1V, IC=300mA VCE=1V, IC=100mA VCE=1V, IC=300mA VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz *Pulse Test: Pulse Width 380 s, Duty Cycle 2% MHz pF Classification Of hFE1 Rank Range A 100 ~ 250 B 160 ~ 400 C 250 ~ 630 GBC337 Page: 1/3 ISSUED DATE :2005/10/21 REVISED DATE : Characteristics Curve Fig 1. DC Current Gain Fig 2. Saturation Region Fig 3. “On” Voltages Fig 4. Temperature Coefficients Fig 5. Capacitances Fig 6. Safe Operating Area GBC337 Page: 2/3 ISSUED DATE :2005/10/21 REVISED DATE : Fig 7. Thermal Response Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GBC337 Page: 3/3 .


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