GBAW56

www.DataSheet4U.com CORPORATION G B AW 5 6 Description S U R F A C E M O U N T, S W I T C H I N G D I O D E ISSUED DATE :2004/02/06 REVISED DATE :2005/12/23C The GBAW56 consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in a small SOT-23 plastic SMD package. Package Dimensions Style: Pin 1.Cathode 2.Cathode 3. Common Anode REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings at TA = 25 Parameter Junction Temperature Storage Temperature Repetitive Peak Reverse Voltage Continuous Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Non-Repetitive Peak Forward Current (1ms) Total Power Dissipation Notes: 1. Device mounted on an FR4 printed-circuit board. single diode loaded (note1) double diode loaded (note1) Symbol Tj Tstg VRRM VR IF IFRM IFSM PD Ratings +125 -65 ~ +150 85 75 150 130 500 1 250 V V mA mA A mW Unit Electrical Characteristics (at TA = 25 Parameter Reverse Voltage Symbol VR VF(1) Forward Voltage VF(2) VF(3) VF(4) Reverse Current Diode Capacitance Reverse Recovery Time IR CD Trr Min. 85 - unless otherwise noted) Max. 715 855 1000 1250 1 2 4 Unit V mV mV mV mV uA pF nS IR=100uA IF=1mA IF=10mA IF=50mA IF=150mA VR=80V VR=0, f=1MHz IF=IR=10mA, RL =100 measured at IR=1mA Test Conditions GBAW56 Page: 1/2 CORPORATION Charact...