GBAV99

www.DataSheet4U.com 1/2 G B AV 9 9 Description The GBAV99 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is designed for high-speed switching application in hybrid thick and thin-film circuits. Package Dimensions Style : Pin1.Anode 2.Cathode 3.Common Connection Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 E 0 0.10 L 0.85 1.15 0 10 F 0.45 0.55 M Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Reverse Voltage Repetitive Reverse Voltage Forward Current Repetitive Forward Current Forward Surge Current(1ms) Total Power Dissipation Symbol Tj Tstg Ratings +150 -65~+150 70 70 150 500 1000 250 Unit PD V V mA mA mA mW Characteristics Characteristic at Ta = 25 Symbol V(BR) VF(1) VF(2) VF(3) VF(4) IR CT Trr Min. 70 Max. 715 855 1000 1250 2.5 1.5 6 Unit V mV mV mV mV uA pF nS IR=100uA IF=1mA IF=10mA IF=50mA IF=150mA VR=70V VR=0, f=1MHz IF=IR=10mA, RL=100 measured at IR=1mA Test Conditions Reverse Breakdown Voltage Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in ...