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GBAV152

GTM

SWITCHING DIODE

www.DataSheet4U.com ISSUED DATE :2005/07/14 REVISED DATE : G B AV 1 5 2 S U R F A C E M O U N T, S W I T C H I N G D I ...


GTM

GBAV152

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www.DataSheet4U.com ISSUED DATE :2005/07/14 REVISED DATE : G B AV 1 5 2 S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E 8 0 V, C U R R E N T 0 . 1 A The GBAV152 is designed for ultra high speed switching application. Description Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings (At TA = 25 Parameter Max. Peak Reverse Voltage Max. Reverse Voltage Max. Average Forward Rectified Current Non-Repetitive Peak Forward surge Current @Tp =1.0us @Tp =1.0s Power Dissipation Junction Temperature Storage Temperature unless otherwise specified) Symbol VRM VR Ratings 80 80 100 225 500 225 150 -55 ~ +150 Unit V V mA mA mW Io IFSM PD TJ TSTG Electrical Characteristics (At TA = 25 Characteristics Reverse Breakdown Voltage Forward Voltage Reverse Voltage Leakage Current Diode Capacitance Reverse Recovery Time (Figure 1) Symbol V(BR)R VF Min. 80 - unless otherwise noted) Max. 1.2 100 2.0 3.0 Unit V V nA pF ns Test Conditions IR=100 A IF=100mA VR=75V VR=0V, f=1.0MHz IR CD trr IF=10mA, VR=6V, RL=100 , Irr=0.1IR 1/2 ISSUED DATE :2005/07/14 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not ...




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