SWITCHING DIODE
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ISSUED DATE :2005/07/14 REVISED DATE :
G B AV 1 5 2
S U R F A C E M O U N T, S W I T C H I N G D I ...
Description
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ISSUED DATE :2005/07/14 REVISED DATE :
G B AV 1 5 2
S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E 8 0 V, C U R R E N T 0 . 1 A The GBAV152 is designed for ultra high speed switching application.
Description
Package Dimensions
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10
Absolute Maximum Ratings (At TA = 25
Parameter Max. Peak Reverse Voltage Max. Reverse Voltage Max. Average Forward Rectified Current Non-Repetitive Peak Forward surge Current @Tp =1.0us @Tp =1.0s Power Dissipation Junction Temperature Storage Temperature
unless otherwise specified)
Symbol VRM VR Ratings 80 80 100 225 500 225 150 -55 ~ +150 Unit V V mA mA mW
Io IFSM
PD TJ TSTG
Electrical Characteristics (At TA = 25
Characteristics Reverse Breakdown Voltage Forward Voltage Reverse Voltage Leakage Current Diode Capacitance Reverse Recovery Time (Figure 1) Symbol V(BR)R VF Min. 80 -
unless otherwise noted)
Max. 1.2 100 2.0 3.0 Unit V V nA pF ns Test Conditions
IR=100 A IF=100mA
VR=75V VR=0V, f=1.0MHz
IR CD trr
IF=10mA, VR=6V, RL=100 , Irr=0.1IR
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ISSUED DATE :2005/07/14 REVISED DATE :
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