GBAS70C

www.DataSheet4U.com CORPORATION G B AS70/ A/C/S Description ISSUED DATE :2003/04/10 REVISED DATE :2005/12/28B S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 7 0 V, C U R R E N T 7 0 m A These Schottky barrier diodes are designed for high speed switching applications, circuit protection and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Package Dimensions REF. A B C D E F Min. 2.70 2.40 1.40 0.35 0 0.45 Millimeter Max. 3.10 2.80 1.60 0.50 0.10 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings at TA = 25 Parameter Operating Junction Temperature Storage Temperature Maximum Repetitive Peak Reverse Voltage Maximum Average Forward Rectified Current Non- Repetitive Peak Forward Surge Current @ tp Thermal Resistance Junction to Ambient Air Total Power Dissipation 1.0s Symbol Tj Tstg VRRM Io IFSM R JA Ratings +125 -65 ~ +125 70 70 100 445 225 Unit V mA mA /W mW PD Electrical Characteristics (at TA = 25 Parameter Reverse Breakdown Voltage Forward Voltage Symbol V(BR)R VF unless otherwise noted) Min. 70 Typ. Max. 410 750 1000 100 10 2.0 5.0 nA uA pF ns mV Unit V IR=10 A IF1=1mA IF1=10mA IF2=15mA VR1=50V VR2=70V VR=0V, f=1MHz IF=IR=10mA, RL =100 , Irr=1mA Test Conditions Reverse Leakage Current Total Capacitance Reverse Recover Time IR ...