LNA2901L

Infrared Light Emitting Diodes LNA2901L GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.25 2-0.8 max. 2-0.6±0.15 2.54 For optical control systems Features High-power output, high-efficiency : Ie = 9 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Long lead-wire type 26.3±1.0 24.3±1.0 5.25±0.3 1.5 7.65±0.2 1.0 ø5.0±0.2 Transparent epoxy resin package Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 160 50 1 3 –25 to +85 – 40 to +100 Unit mW mA A V ˚C ˚C ø6.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) 2 1 1: Cathode 2: Anode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Center radiant intensity Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Pulse forward voltage Reverse current (DC) Capacitance between terminals Half-power angle * Symbol Ie PO λP ∆λ VF VFP* IR Ct θ Conditions IF = 50mA IF = 50mA IF = 50mA IF = 50mA IF = 50mA IFP = 1A VR = 3V VR = 0V, f = 1MHz The angle in which radiant intencity is 50% min 9 typ 12 950 50 1.3 0.6±0.15 max Unit mW/sr mW nm nm 1.5 3 10 V V µA pF deg. 35 20 f = 100 Hz, Duty cycle = 0.1 % 1 LNA2901L Infrared Light Emitting Diodes IF — Ta 60 10 2 IFP — Duty cycle tw = 10µs Ta = 25˚C 80 70 IF — VF Ta = 25˚C IF (mA) IFP (A) 50 IF (mA) Forward current 1 10 10 2 10 60 50 40 30 2...