LNA2802L

Infrared Light Emitting Diodes LNA2802L GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.0 max. 2-0.8 max. 2-0.5±0.1 0.5±0.1 For optical control systems Features High-power output, high-efficiency : PO = 5 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) Good radiant power output linearity with respect to input current Long lifetime, high reliability ø3 plastic package (1.5) ø3.8±0.2 ø3.0±0.2 1.0 2.54 Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 75 50 1 3 –25 to +85 – 40 to +100 Unit mW mA A V ˚C ˚C 1.7 Absolute Maximum Ratings (Ta = 25˚C) 15.0±1.0 4.5±0.3 5.0±0.2 0.6 1 2 1: Anode 2: Cathode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between terminals Half-power angle Symbol PO λP ∆λ VF IR Ct θ Conditions IF = 50mA IF = 50mA IF = 50mA IF = 50mA VR = 3V VR = 0V, f = 1MHz The angle in which radiant intencity is 50% min 2.5 typ 5 940 50 1.3 35 20 max Unit mW nm nm 1.5 10 V µA pF deg. 1 LNA2802L Infrared Light Emitting Diodes IF — Ta 60 10 2 IFP — Duty cycle tw = 10µs Ta = 25˚C 80 70 IF — VF Ta = 25˚C IF (mA) IFP (A) 50 IF (mA) Forward current 1 10 10 2 10 60 50 40 30 20 10 Allowable forward current 40 ...